STGWT20IH125DF

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1250 V, 20 A IH series trench gate field-stop IGBT

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Product overview

Description

These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.

  • All features

    • Designed for soft commutation only
    • Maximum junction temperature: TJ= 175 °C
    • Minimized tail current
    • VCE(sat)= 2.0 V (typ.) @ IC= 15 A
    • Tight parameters distribution
    • Safe paralleling
    • Very low VFsoft recovery co-packaged diode
    • Low thermal resistance
    • Lead free package

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STMicroelectronics - STGWT20IH125DF

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STGWT20IH125DF
Active
TO-3P Industrial Ecopack2

STGWT20IH125DF

Package:

TO-3P

Material Declaration**:

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Marketing Status

Active

Package

TO-3P

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STGWT20IH125DF
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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors