Product overview
Description
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
-
All features
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Logic level drive
- High avalanche ruggedness
- 100% avalanche tested
Recommended for you
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STH160N4LF6-2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models
All resources
| Resource title | Version | Latest update |
|---|
SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
