Product overview
Description
These devices are N-channel Power MOSFETs developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on)in all packages.
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All features
- Designed for automotive applications
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STH175N4F6-2
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