Product overview
Description
This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
-
All features
- Ultra low on-resistence
- 100% avalanche tested
Recommended for you
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STH180N10F3-2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models
All resources
| Resource title | Version | Latest update |
|---|
SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 2.0 | 01 Aug 2015 | 01 Aug 2015 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STH180N10F3-2 | Active | H2PAK-2 | Industrial | Ecopack1 (*) | |
STH180N10F3-2
Package:
H2PAK-2Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STH180N10F3-2 | | | distributors No availability of distributors reported, please contact our sales office |
STH180N10F3-2 Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors