Product overview
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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All features
- AEC-Q101 qualified
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STH2N120K5-2AG
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STH2N120K5-2AG | Active | H2PAK-2 | Automotive | Ecopack1 (*) |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STH2N120K5-2AG | | | distributors No availability of distributors reported, please contact our sales office |
STH2N120K5-2AG Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors