STH310N10F7-6

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Design Win

N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

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Product overview

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

  • All features

    • Among the lowest RDS(on) on the market
    • Excellent figure of merit (FoM)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness

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STMicroelectronics - STH310N10F7-6

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STH310N10F7-6
Active
H2PAK-6 Industrial Ecopack1 (*)

STH310N10F7-6

Package:

H2PAK-6

Material Declaration**:

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Marketing Status

Active

Package

H2PAK-6

Grade

Industrial

RoHS Compliance Grade

Ecopack1 (*)

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STH310N10F7-6
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STH310N10F7-6 Active

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors