STH360N4F6-2

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N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package

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Product overview

Description

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

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STMicroelectronics - STH360N4F6-2

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