STO60N038M9

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Product overview

Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

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Very low FOM (R_DS(on)·Q_g)

Higher dv/dt capability

Excellent switching performance

Easy to drive

100% avalanche tested

Excellent switching performance thanks to the extra driving source pin
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TO-LL leadless surface mounted packages for high-power performance

ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.

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	Part number	Status	Description	Type	Supplier
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	Resource title	Version	Latest update
PDF	DS14897 N-channel 600 V, 33 mΩ typ., 62 A, MDmesh M9 Power MOSFET in a TO‑LL package	1.0	07 Feb 2025	07 Feb 2025 DS14897 N-channel 600 V, 33 mΩ typ., 62 A, MDmesh M9 Power MOSFET in a TO‑LL package 1.0

	Resource title	Version	Latest update
PDF	AN4250 Fishbone diagram for power factor correction	1.1	31 Oct 2024	31 Oct 2024 AN4250 Fishbone diagram for power factor correction 1.1
PDF	AN2842 Paralleling of power MOSFETs in PFC topology	1.4	13 Sep 2018	13 Sep 2018 AN2842 Paralleling of power MOSFETs in PFC topology 1.4
PDF	AN2344 Power MOSFET avalanche characteristics and ratings	1.3	13 Sep 2018	13 Sep 2018 AN2344 Power MOSFET avalanche characteristics and ratings 1.3
PDF	AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters	1.1	13 Sep 2018	13 Sep 2018 AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1

	Resource title	Version	Latest update
PDF	TN1378 HU3PAK package mounting and thermal behavior	1.0	19 Nov 2021	19 Nov 2021 TN1378 HU3PAK package mounting and thermal behavior 1.0
PDF	TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products	1.0	13 Nov 2016	13 Nov 2016 TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0
PDF	TN1224 Mounting instructions for SMD (surface mounting device) packages	2.4	11 Jul 2023	11 Jul 2023 TN1224 Mounting instructions for SMD (surface mounting device) packages 2.4
PDF	TN1225 Mounting instructions for THD (through-hole device) packages	2.0	23 Nov 2023	23 Nov 2023 TN1225 Mounting instructions for THD (through-hole device) packages 2.0

	Resource title	Version	Latest update
PDF	UM1575 Spice model tutorial for Power MOSFETs	1.3	21 Oct 2016	21 Oct 2016 UM1575 Spice model tutorial for Power MOSFETs 1.3

	Resource title	Version	Latest update
PDF	250V-600V-650V MDmesh M9	1.0	22 May 2023	22 May 2023 250V-600V-650V MDmesh M9 1.0
PDF	300-1200 V MDmesh power MOSFETs	1.0	13 Apr 2023	13 Apr 2023 300-1200 V MDmesh power MOSFETs 1.0
PDF	300-1200 V MDmesh: The most complete SJ MOSFETs offer for (H)EV power solutions	1.0	15 Sep 2021	15 Sep 2021 300-1200 V MDmesh: The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
PDF	400/650 V MDmesh™ DM2: STPOWER Power MOSFET series with fast-recovery body diode	1.1	13 Apr 2023	13 Apr 2023 400/650 V MDmesh™ DM2: STPOWER Power MOSFET series with fast-recovery body diode 1.1
PDF	600 V - 650 V MDmesh DM9	1.0	19 Oct 2023	19 Oct 2023 600 V - 650 V MDmesh DM9 1.0
PDF	600 V-650 V MDmesh M9: Super-junction Power MOSFETs for best efficiency	1.0	06 May 2022	06 May 2022 600 V-650 V MDmesh M9: Super-junction Power MOSFETs for best efficiency 1.0
PDF	ST MOSFET Finder, the new app for Android and iOS	1.0	08 May 2020	08 May 2020 ST MOSFET Finder, the new app for Android and iOS 1.0

EDA Symbols, Footprints and 3D Models

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	Resource title	Version	Latest update

SPICE models (1)

	Resource title	Version	Latest update
ZIP	STO60N038M9 SPICE model	1.0	21 Feb 2025	21 Feb 2025 STO60N038M9 SPICE model 1.0

Quality and Reliability

Part Number	Marketing Status	Package	Grade	RoHS Compliance Grade	Material Declaration**
STO60N038M9	Active	TO-LL	Industrial	Ecopack2	PDF XML

STO60N038M9

Package:

TO-LL

Material Declaration**:

PDF XML

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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STO60N038M9

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TO-LL

Tape and Reel

MALAYSIA

EAR99

NEC

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STO60N038M9 Active

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Package:

TO-LL

Packing Type:

Tape and Reel

Country of Origin:

MALAYSIA

ECCN (US):

EAR99

ECCN (EU):

NEC

More Info

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors

Product overview

Description

All features

Featured Videos

Recommended for you

All tools & software

Finder Apps

STPOWER MOSFET Finder

All resources

Product Specifications (1)

Application Notes (4)

Technical Notes & Articles (4)

User Manuals (1)

Flyers (5 of 7)

EDA Symbols, Footprints and 3D Models

All resources

SPICE models (1)

Quality and Reliability

Sample & Buy

STO60N038M9

Product overview

Description

All features

Featured Videos

Recommended for you

All tools & software

Finder Apps

STPOWER MOSFET Finder

All resources

Product Specifications (1)

Application Notes (4)

Technical Notes & Articles (4)

User Manuals (1)

Flyers (5 of 7)

EDA Symbols, Footprints and 3D Models

All resources

SPICE models (1)

License Agreement

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