Product overview
Description
This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
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All features
- Worldwide best RDS(on) x area
- Worldwide best FOM (figure of merit)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
EDA Symbols, Footprints and 3D Models
All resources
Resource title | Version | Latest update |
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SPICE models (1)
Resource title | Version | Latest update | ||
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ZIP | 1.0 | 21 Mar 2023 | 21 Mar 2023 |
Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STP80N600K6 | Active | TO-220 | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
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STP80N600K6 | | | distributors No availability of distributors reported, please contact our sales office |
STP80N600K6 Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors