Product overview
Description
This N-Channel Power MOSFET product utilizes the 6thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
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All features
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STU75N3LLH6-S
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