STW18NM80

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Design Win

N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-247 package

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Product overview

Description

These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

  • All features

    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STW18NM80

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STW18NM80
Active
TO-247 Industrial Ecopack2

STW18NM80

Package:

TO-247

Material Declaration**:

Marketing Status

Active

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors