STW3N150

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Design Win

N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in TO-247 package

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Product overview

Description

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

  • All features

    • 100% avalanche tested
    • Intrinsic capacitances and Qg minimized
    • High speed switching
    • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STW3N150

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STW3N150
Active
TO-247 Industrial Ecopack2

STW3N150

Package:

TO-247

Material Declaration**:

PDF XML

Marketing Status

Active

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors