STW55NM60ND

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N-channel 600 V, 47 mOhm typ, 51 A, FDmesh II Power MOSFET in a TO-247 package

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Product overview

Description

This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

  • All features

    • The worldwide best RDS(on)amongst the fast recovery diode devices in TO-247
    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance
    • High dv/dt and avalanche capabilities

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STW55NM60ND

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STW55NM60ND
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TO-247 Industrial Ecopack2

STW55NM60ND

Package:

TO-247

Material Declaration**:

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Marketing Status

Active

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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