STW62NM60N

Obsolete
Design Win

N-channel 600 V, 0.04 Ohm typ., 65 A MDmesh(TM) II Power MOSFET in a TO-247 package

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Product overview

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

  • All features

    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STW62NM60N

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