ESDA8V2-1J

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EOS and ESD Transil™ protection for charger and battery port

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Product overview

Description

The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages.

  • All features

    • Complies with the following standards:IEC 61000-4-2 level 4 ±15 kV (air discharge) ±8 kV (contact discharge)MIL STD 883G - Method 3015-7: class 3B HBM (human body model): ≥8kV
    • Breakdown voltage VBR = 8.2 V
    • High peak power dissipation: 500 W (8/20 μs waveform)
    • Unidirectional device
    • Low leakage current (< 0.5 μA @ 5 V) BenefitsHigh EOS and ESD protection levelHigh integrationSuitable for high density boards
    • ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge

EDA Symbols, Footprints and 3D Models

STMicroelectronics - ESDA8V2-1J

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
ESDA8V2-1J
Active
SOD323 Industrial Ecopack2

ESDA8V2-1J

Package:

SOD323

Material Declaration**:

PDF XML

Marketing Status

Active

Package

SOD323

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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ESDA8V2-1J
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ESDA8V2-1J Active

Budgetary Price (US$)*/Qty:
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Package:
Packing Type:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

Part Number:

ESDA8V2-1J

Breakdown Voltage (V) (min):

8.2

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors