Product overview
Description
The PD85025C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85025C’s superior linearity performance makes it an ideal solution for mobile applications.
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All features
- Excellent thermal stability
- Common source configuration
- POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V
- BeO free package
- ESD protection
- In compliance with the 2002/95/EC european directive
EDA Symbols, Footprints and 3D Models
STMicroelectronics - PD85025C
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