RF2L16180CB4

NRND
Design Win

180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor

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Product overview

Description

The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external matching network.

  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched for ease of use
    • Optimized for Doherty applications
    • Large positive and negative gate-source voltage range for improved class C operation
    • In compliance with the European Directive 2002/95/EC

EDA Symbols, Footprints and 3D Models

STMicroelectronics - RF2L16180CB4

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
RF2L16180CB4
NRND
B4E Industrial N/A

RF2L16180CB4

Package:

B4E

Material Declaration**:

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Marketing Status

NRND

Package

B4E

Grade

Industrial

RoHS Compliance Grade

N/A

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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RF2L16180CB4 NRND

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