RF2L42008CG2

NRND
Design Win

8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor

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Product overview

Description

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical modulation formats.

  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched for ease of use
    • Large positive and negative gate-source voltage range for improved class C operation
    • Excellent thermal stability, low HCI drift
    • In compliance with the European directive 2002/95/EC

EDA Symbols, Footprints and 3D Models

STMicroelectronics - RF2L42008CG2

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
RF2L42008CG2
NRND
E2 Industrial N/A

RF2L42008CG2

Package:

E2

Material Declaration**:

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Marketing Status

NRND

Package

E2

Grade

Industrial

RoHS Compliance Grade

N/A

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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RF2L42008CG2
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