Product overview
Description
The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical modulation formats.
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All features
- High efficiency and linear gain operations
- Integrated ESD protection
- Internally matched for ease of use
- Large positive and negative gate-source voltage range for improved class C operation
- Excellent thermal stability, low HCI drift
- In compliance with the European directive 2002/95/EC
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EDA Symbols, Footprints and 3D Models
All resources
Resource title | Version | Latest update |
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ADS models (1)
Resource title | Version | Latest update | ||
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ZIP | 1.0 | 23 Nov 2023 | 23 Nov 2023 |
Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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RF2L42008CG2 | NRND | E2 | Industrial | N/A |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
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RF2L42008CG2 | | | distributors No availability of distributors reported, please contact our sales office |
RF2L42008CG2 NRND
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors