Imaging premium
foundry
Providing access to advanced imaging technologies
ST is a recognized industry leader in designing and manufacturing of imaging sensors. With a strong focus on research and development, ST has developed cutting-edge technologies, intellectual property, and tools to create unique solutions with advanced features and top-notch performance.
Through our foundry services, we provide access to mature and high-quality CMOS imaging technologies.
Our customers benefit from a team of experts who support them in designing custom pixels and meeting their specific requirements, regardless of the targeted application.
Thanks to our dedicated in-house CMOS imaging manufacturing facilities, we offer them the flexibility, quality, and supply security they need.
Our technology portfolio includes advanced and innovative features such as back side illumination, 3D stacking, and capacitive deep trench isolation. Our capabilities range from tiny sensors to extremely large sensors, thanks to 1D and 2D stitching capabilities.
Versatile platforms for your application
ST’s advanced imaging technologies are designed to cater to a wide range of applications, ensuring high performance and versatility in various fields.
• Professional photography and cinematography
• Medical imaging
• Machine vision for industrial automation
• Automotive applications
• Security and surveillance
• Augmented and virtual reality
• 3D sensing and imaging
• Space and defense
Our portfolio of imaging technology platforms
ST imaging technologies span across several platforms, all manufactured in our 12-inch fab in Crolles, France.
Back side illumination (BSI) 65 nm
The BSI 65 nm platform enhances light sensitivity and image quality with advanced back side illumination technology, featuring low noise, high full well capacity, and in-pixel tungsten shield capability. 1D and 2D stitching are available, enabling very large sensors.
BSI stacked single photon avalanche diode (SPAD)
The BSI stacked SPAD platform offers high photon detection efficiency with low power consumption and high dynamic range, utilizing a custom SPAD process and advanced 40 nm CMOS technology for high performance.
BSI stacked 65 / 40 nm
The BSI stacked 65 / 40 nm platform combines our BSI 65 nm technology with advanced stacking on 40 nm CMOS, featuring low power, high-density designs, and pixel-level Cu-Cu connections for improved efficiency. Stitching is available, enabling very large sensors.
A unique set of expertise
Capacitive deep trench isolation
1D and 2D stitching
NIR enhancement
Large range of analog and digital IP
SPAD, rolling shutter and global shutter
In-house color filter array and microlenses
Providing you access to multi-project wafer
ST provides multi-project wafer (MPW) shuttles on standard manufacturing technologies, allowing customers to rapidly prototype their designs at a lower cost.
This program enables them to design and test various IP or multiple versions of a pixel before finalizing the product on a full mask set.
The program offers several shuttles each year to provide maximum flexibility. The standard service fee includes mask data preparation, mask set order, wafer processing, sawing, backgrinding, and sample delivery in gel packs. Additional services, such as specific processes or extra samples, are available for an additional fee.
Quality assurance
At ST, we are committed to making our solutions the safest and most reliable in the market. Our goal is to become our customers’ most valued and trusted partner through excellent quality, reliability, and responsiveness.
Quality is deeply embedded in our culture. Our foundry customers benefit from the same approach to quality that we use for our own products. We deploy technologies that have undergone rigorous qualification tests, including the use of processing test vehicles and integration into ST products.
Our 12-inch fab in Crolles, France, where all our imaging technologies are manufactured, is certified to ISO 9001, IATF 16949, ISO 14001, ISO 45001, and ISO 50001 standards.
Learn more about our technology platforms
BSI 65 nm
- Capacitive deep trench isolation – reduces optical crosstalk and dark current, includes in-pixel high-density capacitors
- Variety of reference pixels for rolling shutter and global shutter voltage domains
- Low dark current
- High full well (FW) capacity
- Low noise
- In-pixel tungsten shield capability
- High quantum efficiency (QE)
- In-house gap-less microlenses and color filter arrays (CFA)
- 1D and 2D stitching for large sensors
BSI stacked SPAD
- Full custom SPAD process designed for high photon detection efficiency (PDE), low dark count rate (DCR), low jitter, and low power consumption
- BSI wafer stacked with pixel-level Cu-Cu connections
- Advanced logical node CMOS 40 nm: low power, high density, low cost
- High maximum count rate, allowing full advantage of high PDE even under high illumination
- Low breakdown voltage and low charge per pulse, enabling low power consumption even for large arrays
BSI stacked 65 / 40 nm
- Pixel: same technology bricks as BSI
- BSI wafer stacked with pixel-level Cu-Cu connections
- Advanced logical node 40 nm with 1.1 V operating voltage, enabling low power, high-density designs
- High full well (FW) capacity
- Low noise
- In-pixel tungsten shield capability
- In-pixel high-density capacitor
- High quantum efficiency (QE)
- In-house gap-less microlenses and color filter arrays (CFA)
- 1D and 2D stitching for large sensors
A broad portfolio of pixels
With a wide portfolio of reference pixels and extensive expertise, we have years of experience helping customers across diverse markets create custom designs that meet their specific needs and requirements. Our long-standing support ensures tailored solutions for your unique goals.
| Technology | Pitch | Feature |
|---|---|---|
| BSI | 1.4 µm | Rolling shutter 4 shared pixels – 1T75 |
| BSI | 1.75 µm | Rolling shutter 2 shared pixels – 2T5 |
| BSI | 2.16 µm | Global shutter voltage domain 6T 2 in-pixel capacitors |
| BSI | 2.61 µm | Global shutter voltage domain 8T 2 in-pixel capacitors |
| BSI | 3.2 µm | Rolling shutter Non-shared pixels Dual gain |
| Stack SPAD | 10 µm | BSI diode PDE 21% C40 logic wafer stacking |
| FSI SPAD | 10 µm | FSI diode C40 digital-based |
