Innovation & Technology
R&D. 9,500+ employees.
Innovation. 20,000 patents.
Partnerships. 195 active R&D programs.
We innovate to create unique technologies and products that provide our customers the best solutions to address their challenges and opportunities.
Innovation is a collaborative task requiring the best of collective intelligence to succeed.
Smart power technology for greener solutions
Combining power technologies with embedded intelligence is a challenge ST first took up over 25 years ago. Today our latest innovations continue to enable customers to develop more efficient and compact power & energy management solutions.
BCD
BCD is a key technology for power ICs. ST invented this technology in the mid-eighties and has continually developed it ever since.
STi²GaN
Leveraging GaN technology, our STi²GaN initiative ensures a large variety of power applications benefit in terms of size, performance and cost.
VIPower
VIPower technologies help applications control high power, sense and communicate their status, and provide device protection – with a single device.
STi²Fuse
STi²Fuse intelligent switches provides superior fast-acting, resettable, and reliable over-current protection, helps simplify vehicle wiring harnesses and reduce weight.
Cryptography in the post-quantum era
Quantum computers have the potential to make public-key cryptographic algorithms vulnerable to attacks. Post-quantum cryptography is designed to thwart the quantum computing threat. ST is deeply involved in the standardization process and the development of post-quantum algorithms to ensure a seamless transition to the post quantum era, and protect our digital future.
High power innovation
Power transistors are a key component of every power system, which is why we are continuously innovating to deliver the next level of efficiency and reliability. We use traditional silicon, wide bandgap materials, and advances in packaging technology to help our customers achieve the results they need.
Gallium Nitride (GaN)
GaN-based transistors represent a major step forward in power conversion, providing unrivaled energy efficiency and power density.
Silicon Carbide (SiC)
Silicon carbide exhibits intrinsic advantages over mainstream silicon, enabling higher energy efficiency in many sustainable applications.
Trench Gate Field Stop
Our high-precision TGFS architecture extracts the full benefits of cost-effective IGBT devices for robust switching in higher power applications.
Superjunction MDMesh
High-voltage superjunction MOSFETs feature superior architecture for optimized silicon performance in efficiency-critical applications.
Artificial intelligence at the edge
Edge AI is a paradigm shift for AI that brings many advantages over AI in the cloud. At ST, we invest in research, innovation, and development activities to create what our customers need to benefit from the power of edge AI by bringing it to microcontrollers, microprocessors, and smart sensors.
Micro-Electro-Mechanical Systems
MEMS are becoming increasingly pervasive today, transforming the way the digital and analog worlds interact. We are innovating to deliver the next generations of MEMS sensors and actuators with proprietary leading-edge process technologies, packaging and manufacturing capabilities.
Digital and mixed-signal technologies for the applications of tomorrow
Small steps in innovation can have a big impact. Advances in digital and mixed-signal technologies enable smaller systems without compromising on performance. With constant innovation in our portfolio of RF, analog and digital technologies, we ensure we meet the power and integration requirements of our customers, today and in the future.
FD-SOI
FD-SOI outstanding low power performance and high reliability deliver unique benefits for cost effective RF/mmW and mixed-signal applications.
Phase Change Memory (PCM)
Embedded PCM (ePCM) solution offers substantial advantages over Flash and other embedded memory technologies in term of density and robustness.
RF-SOI
ST’s innovative RF-SOI technology solutions enable the design of a full range of advanced RF Front-End Modules (FEMs).
BiCMOS
BiCMOS technology allows the development of high performance RF ICs in a compact and power-efficient design.
eSTM
Developed and industrialized by ST, embedded Select in Trench Memory (eSTM) technology in a 40nm node further improves the footprint, cost, and performance of general-purpose and secure microcontrollers.
Space ASIC
ST offers complete space technology platforms and differentiated radiation-capable technologies developed by our experts in radiation hardening.
Technology is driven by innovation
The technology developments we make are guided by long-term market trends. These enable or enhance applications for our customers by turning state-of-the- art chip fabrication technologies into cutting-edge commercial products.
We create a ‘funnel of innovation’ that allows us to develop the market-leading products and solutions that fuel our future growth. It enables us to continue pushing the boundaries of disruption in technologies and applications, in line with our strategic vision objectives.
Our Innovation Office plays a crucial role in enhancing our technology. It is tasked with creating more external and internal innovation opportunities and connecting emerging market trends with our internal technology expertise. This enables us to identify opportunities, be ahead of the competition and lead the way in new or existing technology domains.
