Product overview
Description
The EVLMG1LPBRDR1 is a GaN-based half-bridge power module equipped with MASTERGAN1L, which quickly creates new topologies without needing a complete PCB design.
The module is fine-tuned to work in an LLC application: in fact, the low side resistors are set to zero and two external body diodes are connected in parallel to each half-bridge GaN.
The module can also work in active clamp or resonant peak current mode flyback applications simply by properly adjusting the low side sense resistor and removing the parallel diodes.
Two alternative 6 V linear regulators are embedded in the PCB: a simple low-cost regulator and a more precise temperature-independent one. Due to the external bootstrap diode and capacitor, a proper supply for VCC, PVCC, and Vbo is provided.
The module accepts only separate driving signals and the delay time can be modulated by adjusting a dedicated RC filter.
The EVLMG1LPBRDR1 is a 30 x 40 mm wide FR-4 PCB, resulting in an Rth(J-A) of 45 °C/W, without forced airflow.
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All features
- GaN half-bridge daughter board equipped with MASTERGAN1L, suitable for power applications requiring fast wake up time.
- Embedded independently adjustable dead times for LIN and HIN signals.
- On board alternate option for 6 V.
- Discrete bootstrap diode and capacitor for high frequency solutions.
- Adjustable low side shunt to serve peak current mode control algorithms.
- External parallel body diodes to serve LLC application needs.
- 45 °C/W junction to ambient thermal resistance to evaluate large power topologies.
- RoHS compliant.
