STGB20NB41LZT4

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Design Win

Automotive-grade 412 V, 20 A internally clamped IGBT in a D2PAK package

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Product overview

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The built-in collector-gate Zener exhibits a very precise active clamping while the gate-emitter Zener supplies an ESD protection.

  • All features

    • AEC-Q101 qualified
    • ESD gate-emitter protection
    • Gate-collector high voltage clamping
    • Logic level gate driving
    • Very low saturation voltage
    • High current capability

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGB20NB41LZT4

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STGB20NB41LZT4
Active
D2PAK Automotive Ecopack1

STGB20NB41LZT4

Package:

D2PAK

Material Declaration**:

PDF XML

Marketing Status

Active

Package

D2PAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STGB20NB41LZT4
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STGB20NB41LZT4 Active

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Part Number:

STGB20NB41LZT4

Operating Temperature (°C)

Min:

Max:

PTOT (W) (max):

200

Eoff (mJ) (typ) (@ Tc=125°C):

18.4

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors