STL160N10F8

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Design Win

N-Channel Enhancement Mode 100V, 3.2mOhm max, 158A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

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Product overview

Description

The STL160N10F8 is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.

It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.

  • All features

    • MSL1 grade
    • 175 °C maximum operating junction temperature
    • 100% avalanche tested
    • Low gate charge Qg

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STMicroelectronics - STL160N10F8

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STL160N10F8
Active
PowerFLAT 5x6 Industrial Ecopack2

STL160N10F8

Package:

PowerFLAT 5x6

Material Declaration**:

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Marketing Status

Active

Package

PowerFLAT 5x6

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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