STT6N3LLH6

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Design Win

N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package

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Product overview

Description

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

  • All features

    • RDS(on)* Qgindustry benchmark
    • Extremely low on-resistance RDS(on)
    • High avalanche ruggedness
    • Low gate drive power losses

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STMicroelectronics - STT6N3LLH6

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STT6N3LLH6
Active
SOT23-6L Industrial Ecopack2

STT6N3LLH6

Package:

SOT23-6L

Material Declaration**:

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Marketing Status

Active

Package

SOT23-6L

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STT6N3LLH6
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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors