PD54003-E

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RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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Product overview

Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true surface-mount device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST-originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF requirements, and offers excellent RF performance as well as ease of assembly.

  • All features

    • Excellent thermal stability
    • Common source configuration
    • POUT = 3 W with 12 dB gain @ 500 MHz
    • New RF plastic package

EDA Symbols, Footprints and 3D Models

STMicroelectronics - PD54003-E

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
PD54003-E
Active
PowerSO-10RF (formed lead) Industrial Ecopack2

PD54003-E

Package:

PowerSO-10RF (formed lead)

Material Declaration**:

Marketing Status

Active

Package

PowerSO-10RF (formed lead)

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors