RF2L16080CF2

NRND
Design Win

80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor

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Product overview

Description

The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation formats.

  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally input matched for ease of use
    • Large positive and negative gate-source voltage range for improved class C operation
    • Excellent thermal stability, low HCI drift
    • In compliance with the European Directive 2002/95/EC

EDA Symbols, Footprints and 3D Models

STMicroelectronics - RF2L16080CF2

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
RF2L16080CF2
NRND
A2 Industrial N/A

RF2L16080CF2

Package:

A2

Material Declaration**:

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Marketing Status

NRND

Package

A2

Grade

Industrial

RoHS Compliance Grade

N/A

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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