Electron Microscopy - A bridge between research and industry
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The workshop is jointly organized by STMicroelectronics and the Institute for Microelectronics and Microsystems of the Italian National Research Council (IMM-CNR). It represents a melting point between the academic and research world and the industrial development in the field of the structural characterization and the microanalysis by electron microscopy.
The scope of the event will be focused on new methods applied to semiconductor devices (silicon based, wide band gap, metallic interconnections, nanotechnology, etc) and materials science. It will highlight recent progress in instrumentation, in chemical and structural analysis, in sample preparation by mechanical thinning and by FIB, as well as in situ devices polarization dependent analyses.
The scientific program will be opened by a lectio magistralis delivered by Prof. Giulio Pozzi (Phys. Dep. of Bologna University) regarding Electron Holography: from the beginning to recent developments. The session will continue with scientific presentations given by researchers coming from STMicroelectronics, IMM-CNR, ENEA, LETI CEA, CNRS-CEMES and Companies specialized in electron microscopy.
The workshop will present new insights focusing on the following topics:
- TEM: Advanced Structural Characterization (STEM, nBED, Holodark, Tomography, ASTAR, …) and related Spectroscopic Techniques (EELS, EDS)
- SEM: Advanced Characterization (EBIC, Voltage Contrast, EDS, …)
- Novel specimen preparation techniques by FIB
- Materials: SiC, GaN, Phase Change Materials, Metal Alloys, ...
- Latest company products: Helium Ion Microscope, New generation of (S)TEM and FIB, Highly controlled mechanical specimen preparation,...
Download the workshop flyer here!
There is no charge to participate in this event, but you must register through my.st.com.
General Chairs
Simona Boninelli (CNR-IMM, Catania, Italy) and Domenico Mello (STMicroelectronics,CTM Ph.Lab, Catania, Italy)
Agenda
| Time | Topic | Speaker |
| 07:45 - 08:45 | Registration and breakfast | |
| 09:00 - 09:20 | Welcome from Catania Manufacturing | F. Caizzone, STMicroelectronics Catania |
| 09:20 - 09:40 | Welcome from CNR-IMM | C. Spinella, DSFTM-CNR |
| 09:40 - 10:15 | Lectio Magistralis – Electron holography: past, present and future | G. Pozzi, University of Bologna and Ernst Ruska-Centre Jülich |
| 10:15 - 10:35 | Hitachi solutions from sample preparation to analysis | S. Juergen, Hitachi |
| 10:35 - 10:50 | Coffee Break | |
| 10:50 - 11:10 | Defects characterization of ion implanted P doped 4H-SiC | S. Boninelli, CNR-IMM Catania |
| 11:10 - 11:30 | Low KV STEM on thick samples | F. Cazzaniga, STMicroelectronics Agrate |
| 11:30 - 11:50 | Advances in Dualbeam Automation for Sample Preparation and System Maintenance | D. Donnet, Thermo Fisher Scientific |
| 11:50 - 12:10 | Scanning Electron Microscopy techniques for technological applications | V. Morandi, CNR-IMM Bologna |
| 12:10 - 12:30 | Advanced TEM characterization for 28nm Phase Change Memory devices (STEM imaging, EDX & ASTAR techniques) | L. Clement and A. Valery, ST Crolles |
| 12:30 - 12:50 | Failure analysis in the semiconductor devices | R. Vana, Tescan |
| 12:50 - 13:10 | Quantitative EDS analysis in transmission electron microscopy using unconventional reference materials | M. Nacucchi , ENEA Brindisi |
| 13:10 - 14:30 | Lunch | |
| 14:30 - 14:50 | TEM EDS and AES quantitative analysis of Ni segregation in metal layers | D. Mello, STMicroelectronics Catania |
| 14:50 - 15:10 | Challenge Beyond the nanoscale at the Sub-A electron microscopy lab of CNR-IMM | G. Nicotra. CNR-IMM Catania |
| 15:10 - 15:30 | High resolution Materials Characterization with He and Ne Beams | P. Gnauck, Zeiss |
| 15:30 - 15:50 | The Helium Ion Microscopy: some experimental results to disclose nanostructures | M. Re, ENEA Brindisi |
| 15:50 - 16:10 | SiC-SiO2 interface at the atomic scale | C. Bongiorno, CNR-IMM Catania |
| 16:10 - 16:30 | Coffee Break | |
| 16:30 - 16:50 | 2D & 3D advanced Transmission Electron Microscopy for semiconductor characterization | N. Bernier, Leti CEA Grenoble |
| 16:50 - 17:10 | Measuring lattice strain in semiconductors with the TEM: a short review | R. Balboni, CNR-IMM Bologna |
| 17:10 - 17:30 | Leica Workflow for EM sample preparation with Ion Millin | S. Sevillano, Leica |
| 17:30 - 17:50 | STEM EELS study of Ge rich GeSbTe thin film for memory applications | M. Scuderi, CNR-IMM Catania |
| 17:50 - 18:10 | Advanced TEM studies of the crystallization process in Ge-rich phase change materials for future memory devices | M. Agati, CNRS-CEMES Toulouse |
| 18:10 - 18:30 | State of the art in the preparation of samples and innovative techniques | M. Fedele 2MStrumenti, Roma |
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