The STDRIVE® GaN gate drivers devices are half-bridge gate drivers for Enhancement mode GaN FETs or N-channel power MOSFET.
The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
They feature UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with microcontroller and DSP.
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MasterGaN, ST's world first solution to integrate Si driver and 2 GaN power transistors in 1 package
