製品概要
概要
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.
-
特徴
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
- Wide distance of 4.25 mm between the pins
注目ビデオ
ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.
推奨コンテンツ
EDAシンボル / フットプリント / 3Dモデル
STMicroelectronics - STFH10N60M2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
EDAシンボル
フットプリント
3Dモデル
すべてのリソース
| タイトル | バージョン | 更新日 |
|---|
SPICE models (1)
| タイトル | バージョン | 更新日 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 02 Feb 2021 | 02 Feb 2021 |
