STGSH80HB65DAG - Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode - STマイクロエレクトロニクス

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製品概要

概要

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included in every switch. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.

特徴
AQG 324 qualified

High-speed switching series

Maximum junction temperature: T_J = 175 °C

Low V_CE(sat) = 1.7 V (typ.) @ I_C = 80 A

Minimized tail current

Tight parameter distribution

Low thermal resistance thanks to DBC substrate

Positive temperature V_CE(sat) coefficient

Soft and very fast recovery antiparallel diode

Isolation rating of 3.4 kVrms/min
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製品型番	マーケティング･ステータス	概要	パッケージ	グレード	RoHSコンプライアンスグレード	材料宣誓書**
STGSH80HB65DAG	量産中	Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode	ACEPACK SMIT	オートモーティブ	Ecopack2	PDF XML

STGSH80HB65DAG

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Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode

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