The STPOWER IGBT family is extended with the new 1200 V MS series, ideal for battery thermal management, HV safety switches, air conditioners, and auxiliary loads for HEV and EV (900 VBUS).
MS series IGBTs are developed using an advanced proprietary trench gate field-stop structure. The MS series IGBT improves on the low-loss M series with outstanding short-circuit capability at high bus voltages, which is especially useful for inverter systems. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution ensure safer paralleling operation.
Applications
The 1200 V MS series is designed for applications working at a switching frequency between 2 and 20 kHz, ensuring high ruggedness and reliable performance in harsh environments thanks to a minimum short-circuit withstand time of 8 µs at 175°C starting junction temperature and a wide safe operating area (SOA).
Product types
Specifically designed for automotive applications, the 1200 V MS series IGBT in trench gate field-stop (TGFS) technology offers slightly positive VCE(sat) temperature coefficient and very tight parameter distribution for design simplification and easy paralleling.
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ST’s 1200 V MS series IGBT is available with a current rating of 40 A in TO-247 long leads. Devices with a current rating of 15 A and 25 A are under development.
Benefits
- Longer lifetime
- Safe paralleling
- Soft and fast recovery antiparallel diode
- High robustness
Characteristics
- 1200 V breakdown voltage
- VCE(sat) 1.95 V (typ) @ 40 A
- Tight parameter distribution
- Safer paralleling
- Tj (max) = 175°C
- Copacked freewheeling diode
- Short circuit withstand time >5 µs @ TJ-start=150°C, VCC=800 V, VGE=15 V
- IGBT standalone version available for pure resistive loads
