製品概要
概要
The EVSTGAP2SICSN is a half-bridge evaluation board designed to evaluate the STGAP2SICSN isolated single gate driver.
The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for high power inverter applications such as motor drivers in industrial applications equipped with SiC power switch.
The separated source and sink outputs allow to independently optimize turn-on and turn-off by using dedicated gate resistors.
The device integrates protection functions: UVLO and thermal shutdown are included to easily design high reliability systems. Dual input pins allow choosing the control signal polarity and implementing HW interlocking protection to avoid cross-conduction in case of controller's malfunction.
The device allows implementing negative gate driving, and the on-board isolated DC-DC converters allow working with optimized driving voltage for SiC.
The EVSTGAP2SICSN board allows evaluating all the STGAP2SICSN features while driving a half-bridge power stage with voltage rating up to 520 V. It is possible to increase bus voltage by replacing the power switches with appropriate devices in H2PACK-7L or H2PACK-2L package and the C29 capacitance if needed.
The board components are easy to access and modify to make driver performance evaluation easier under different application conditions and fine adjustment of final application components.
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特徴
- Board
- Half bridge configuration, high voltage rail up to 520 V
- SCTH35N65G2V-7: 650 V, 55 mΩ 2nd generation SiC MOSFET
- Negative gate driving
- On-board isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV maximum isolation
- VDD logic supplied by on-board generated 3.3 V or VAUX = 5 V
- Easy jumper selection of driving voltage configuration: +17/0 V; +17/-3 V; +19/0 V; +19/-3 V
- デバイス
- 1700 V functional isolation
- Driver current capability: 4 A source/sink @ 25 °C
- Separate sink and source output for easy gate driving configuration
- Short propagation delay: 75 ns
- UVLO function
- Gate driving voltage up to 26 V
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Temperature shutdown protection
- Standby function
- Board
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品質 & 信頼性
| 製品型番 | マーケティング･ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | WEEE Compliant | 材料宣誓書** |
|---|---|---|---|---|---|---|
| EVSTGAP2SICSN | 量産中 | CARD | インダストリアル | Ecopack1 | - | |
EVSTGAP2SICSN
Package:
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| 製品型番 | 製品ステータス | Budgetary Price (US$)*/Qty | STから購入 | Order from distributors | パッケージ | 梱包タイプ | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | サプライヤ | コア製品 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EVSTGAP2SICSN | | | distributors 販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください |
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EVSTGAP2SICSN 量産中
販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください
（*）概算用の参考価格（US$）です。現地通貨でのお見積りについては、STのセールス･オフィスまたは販売代理店までお問い合わせください。