製品概要
概要
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size™” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
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特徴
- Ultra low on-resistance
- 100% avalanche tested
EDAシンボル / フットプリント / 3Dモデル
STMicroelectronics - STB185N55F3
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すべてのリソース
| タイトル | バージョン | 更新日 |
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SPICE models (1)
| タイトル | バージョン | 更新日 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
