STB5N62K3

生産終了
Design Win

N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in D2PAK package

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製品概要

概要

This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.

  • 特徴

    • 100% avalanche tested
    • Extremely high dv/dt capability
    • Very low intrinsic capacitance
    • Improved diode reverse recovery characteristics
    • Zener-protected

EDAシンボル / フットプリント / 3Dモデル

STMicroelectronics - STB5N62K3

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