製品概要
概要
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STBV42G and STBV42G-AP are supplied using halogen-free molding compound.
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特徴
- High voltage capability
- Very high switching speed
- Low spread of dynamic parameters
EDAシンボル / フットプリント / 3Dモデル
STMicroelectronics - STBV42
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