STD2NK60Z-1

生産終了
Design Win

N-channel 600 V, 7.2 Ohm, 1.4 A Zener-protected SuperMESH(TM) MOSFET in a IPAK package

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製品概要

概要

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS-FETs including revolutionary MDmesh™ products.

  • 特徴

    • GATE CHARGE MINIMIZED
    • TYPICAL RDS(on) = 7.2 Ω
    • ESD IMPROVED CAPABILITY
    • EXTREMELY HIGH dv/dt CAPABILITY
    • NEW HIGH VOLTAGE BENCHMARK
    • 100% AVALANCHE TESTED

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STMicroelectronics - STD2NK60Z-1

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