製品概要
概要
This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance that is superior to similar products on the market.
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特徴
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
推奨コンテンツ
EDAシンボル / フットプリント / 3Dモデル
STMicroelectronics - STD7NM80-1
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すべてのリソース
| タイトル | バージョン | 更新日 |
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SPICE models (1)
| タイトル | バージョン | 更新日 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
