製品概要
概要
This device is a dual NPN high voltage power transistor manufactured using multi-epitaxial planar technology. It is housed in a dual-island DIP-8 package, with separated terminals for a high degree of mounting flexibility.
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特徴
- Low VCE(sat)
- Simplified circuit design
- Reduced component count
- Fast switching speed
EDAシンボル / フットプリント / 3Dモデル
STMicroelectronics - STD840DN40
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