製品概要
概要
This series of devices is designed using the second generation of MDmesh Technology.
This revolutionary Power MOSFET associates a new vertical structure to the Companys strip layout to yield one of the worlds lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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特徴
- 100% avalanche tested
- Low gate input resistance
- Low input capacitance and gate charge
注目ビデオ
ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.
EDAシンボル / フットプリント / 3Dモデル
STMicroelectronics - STF14NM65N
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