製品概要
概要
This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is optimized both in conduction and switching losses for hard switching commutation, where short-circuit ruggedness is an essential feature. A freewheeling diode with a low drop forward voltage is included in every switch. The result is a product specifically designed to maximize efficiency and power density in industrial drives.
-
特徴
- Low-loss and short-circuit rugged IGBTs
- Maximum junction temperature: TJ = 175 °C
- VCE(sat) = 1.8 V (typ.) @ IC = 50 A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
- Soft and fast-recovery antiparallel diode
- Isolation rating of 3.4 kVrms/min
eDesignSuite
eDesignSuite is a comprehensive set of easy-to-use design-aid utilities ready to help you streamline the system development process with a wide range of ST products.
Power Management Design Center
Thermal-electrical Simulators for Components
Signal Conditioning Design Tool
NFC/RFID Calculators
Power Supply Design Tool
LED Lighting Design Tool
Digital Power Workbench
Power Tree Designer
AC Switches Simulator
Rectifier Diodes Simulator
Twister Sim
TVS Simulator
