製品概要
概要
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
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特徴
- Low on-voltage drop (VCE(sat))
- Low Cres/ Ciesratio (no cross conduction susceptibility)
- Short-circuit withstand time 10 μs
- IGBT co-packaged with ultra fast free-wheeling diode
推奨コンテンツ
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STMicroelectronics - STGW40NC60KD
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