製品概要
概要
These devices are N-channel Power MOSFETs developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on)in all packages.
-
特徴
- Designed for automotive applications
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
EDAシンボル / フットプリント / 3Dモデル
STMicroelectronics - STH175N4F6-2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
EDAシンボル
フットプリント
3Dモデル
