製品概要
概要
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
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特徴
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
EDAシンボル / フットプリント / 3Dモデル
STMicroelectronics - STH360N4F6-2
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