N-channel 1500 V, 1.8 Ohm typ., 8 A PowerMESH Power MOSFET in a TO-247 package
Download datasheet Order DirectUsing the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
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