製品概要
概要
This device is an NPN power transistor manufactured using high voltage multi epitaxial planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA.
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特徴
- High voltage capability
- Low spread of dynamic parameters
- Minimum lot-to-lot spread for reliable operation
- Very high switching speed
- Integrated antiparallel collector-emitter diode
EDAシンボル / フットプリント / 3Dモデル
STMicroelectronics - TRD136D
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