A necessary companion for discrete power MOSFETs and IGBTs as well as digital – microcontrollers, DSPs and FPGs – or analog controllers in any switched-mode power converter STDRIVE gate drivers generate the necessary voltage and current level required to accurately and efficiently activate the power stage in industrial, consumer, computer and automotive applications.
With a range spanning from single- to half-bridge and multiple-channel drivers rated for either low- or high-voltage (up to 1500 V) applications, ST also offers galvanically-isolated gate driver ICs for safety and functional requirements, System-in-Package (SiP) solutions integrating high- and low-side gate drivers and MOSFET-based power stages, responding to the industrial market trend towards higher levels of integration and lower development costs.
In many cases, there is an STDRIVE perfectly designed to fit your switched-mode power converter design. STDRIVE comes with extensive evaluation hardware and software as well as a technical documentation toolbox to help minimize time-to-market.
Gallium nitride (GaN) is revolutionizing the power engineering world by enabling high speed, increased efficiency and higher power density never before possible with silicon MOSFETs. Integrating GaN transistors and gate drivers, our advanced MasterGaN systems-in-package offer high efficiency due to their optimized gate drive layout, high power density and increased switching frequency due to minimal parasitic effects.
Our MasterGaN platform including MasterGaN1, MasterGaN2, MasterGaN3, MasterGaN4, MasterGaN5 is fully available to better address specific application requirements.
The GaN drivers devices are half-bridge gate drivers for enhancement mode GaN FETs or N-channel power MOSFET
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MasterGaN, ST's world first solution to integrate Si driver and 2 GaN power transistors in 1 package
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MasterGaN rides the new wave of GaN Power
Revolutionizing power engineering and pushing performance beyond ordinary silicon-based solutions with ST’s MasterGaN, industry's first integrated solution with Silicon driver and two GaN power transistors in one package.
