Specifically designed for high-reliability and space applications, ST's Rad-Hard Power MOSFETs are available in both N- and P-channel versions and feature a range of breakdown voltages up to 100 V, drain current up to 48 A, maximum RDS(on) of 30 mΩ and a Total Ionizing Dose (TID) radiation level of 100 krad for P-channel and 50 krad for N-channel.
Manufactured using ST's unique STripFET™ process, these radiation-hardened power MOSFETs come in dice and hermetic SMD.5 packages as well as through-hole TO-254AA and TO-257AA packages.
