STB8NM60D

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N-channel 600 V, 0.9 Ohm, 8 A MDmesh Power MOSFET in a D2PAK package

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製品概要

概要

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters

  • 特徴

    • High dv/dt and avalanche capabilities
    • Low input capacitance and gate charge
    • 100% avalanche rated
    • Fast internal recovery diode
    • Low gate input resistance

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STMicroelectronics - STB8NM60D

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