製品概要
概要
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
-
特徴
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
推奨コンテンツ
EDAシンボル / フットプリント / 3Dモデル
STMicroelectronics - STU4N80K5
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
EDAシンボル
フットプリント
3Dモデル
すべてのリソース
| タイトル | バージョン | 更新日 |
|---|
SPICE models (1)
| タイトル | バージョン | 更新日 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
