製品概要
概要
The STDRIVEG610 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.
The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode.
High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG610 optimized for driving high-speed GaN.
The STDRIVEG610 features supply UVLOs tailored to fast startup and low-consumption soft-switching applications, but with full hard switching support and interlocking to avoid cross-conduction conditions. The high-side regulator is characterized by very short wake-up time to maximize the application efficiency during intermittent operation (burst mode).
The input pins extended range allows easy interfacing with controllers. A standby pin allows to reduce the power consumption during inactive periods or burst mode.
The STDRIVEG610 operates in the industrial temperature range, -40 °C to 125 °C.
The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.
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特徴
- High voltage rail up to 600 V
- dV/dt transient immunity ±200 V/ns
- Driver with separated sink and source path for optimal driving:
- 2.4 A and 1.2 Ω sink
- 1.0 A and 3.7 Ω source
- High-side and low-side linear regulators for 6 V gate driving voltage
- Ultra fast high-side startup time: 300 ns
- 45 ns propagation delay, 15 ns minimum output pulse
- High switching frequency (> 1 MHz)
- Embedded 600 V bootstrap diode
- Full support of GaN hard-switching operation
- UVLO function on VCC, VBO, and VLS
- Separated logic inputs and shutdown pin
- Fault pin for overtemperature and UVLO reporting
- Stand-by function for low consumption mode
- Separated PGND for Kelvin source driving and current shunt compatibility
- 3.3 V to 20 V compatible inputs with hysteresis and pull-down
